通用
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 50A, 10V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 116 nC @ 10 V |
| Input Capacitance (Ciss) (Max) @ Vds | 8336 pF @ 60 V |
| 制造商 | Goford Semiconductor |
| 安装类型 | Through Hole |
| 包装 | Tube |
| 产品状态 | 在产 |
| 技术 | MOSFET (Metal Oxide) |
| Vgs (Max) | ±20V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |