G7P03D2

Name: G7P03D2
Brand: Goford Semiconductor

模拟与电源

P-30V,-7A,RD(MAX)<20.5M@-10V,VTH

在产6-WDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	20.5mOhm @ 1A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	19 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1900 pF @ 15 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	1.1V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	7A (Tc)
最大功耗	1.3W (Tc)

工作温度	-55°C ~ 150°C (TJ)