G700P06T

Goford Semiconductor

G700P06T

模拟与电源

P-60V,25A,RD<70M@-10V,VTH1V~-2.5

在产TO-220-3模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs70mOhm @ 4A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1428 pF @ 30 V
制造商Goford Semiconductor
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压60 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C25A (Tc)
最大功耗100W (Tc)

机械

封装Tube
Package / CaseTO-220-3
供应商器件封装TO-220

环境

工作温度-55°C~150°C(TJ)