G700P06H

Name: G700P06H
Brand: Goford Semiconductor

模拟与电源

P-60V,-5A,RD(MAX)<75M@-10V,VTH-1

在产TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	75mOhm @ 6A, 10V
FET Feature	Standard
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	15.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1459 pF @ 30 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
系列	TrenchFET®
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	5A (Tc)
最大功耗	3.1W (Tc)

工作温度	-55°C ~ 150°C (TJ)