G45P40T

Name: G45P40T
Brand: Goford Semiconductor

模拟与电源

MOSFET, P-CH, 40V,45A,TO-220

在产TO-220-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	16mOhm @ 30A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	3269 pF @ 20 V
制造商	Goford Semiconductor
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
最大功耗	80W (Tc)

工作温度	-55°C~150°C(TJ)