G33N03D52

Name: G33N03D52
Brand: Goford Semiconductor

模拟与电源

N30V, 33A,RD<13M@10V,VTH1V~3V, D

在产DFN5*6模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	13mOhm @ 16A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	782 pF @ 15 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	33A (Tc)
最大功耗	29W (Tc)

工作温度	-55°C~150°C(TJ)