G300P06D5

Name: G300P06D5
Brand: Goford Semiconductor

模拟与电源

P-60V,-40A,RD(MAX)<30M@-10V,VTH

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	30mOhm @ 10A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	2705 pF @ 30 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
系列	G
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)
最大功耗	50W (Tc)

工作温度	-55°C~150°C(TJ)