G2K3N10H

Name: G2K3N10H
Brand: Goford Semiconductor

模拟与电源

MOSFET, N-CH,100V, 2A,SOT-223

在产TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	220mOhm @ 2A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	434 pF @ 50 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	2A (Tc)
最大功耗	2.4W (Tc)

工作温度	-55°C~150°C(TJ)