G20N03D2

Goford Semiconductor

G20N03D2

Datasheet

模拟与电源

N30V,RD(MAX)<24M@10V,RD(MAX)<29M

在产6-WDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15mOhm @ 5A, 10V
FET FeatureStandard
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds873 pF @ 30 V
制造商Goford Semiconductor
安装类型Surface Mount
Product StatusActive
系列TrenchFET®
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C9A (Tc)
最大功耗1.5W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case6-WDFN Exposed Pad
供应商器件封装6-DFN (2x2)

环境

工作温度-55°C ~ 150°C (TJ)