G2014

Name: G2014
Brand: Goford Semiconductor

模拟与电源

N20V,RD(MAX)<9M@4.5V,RD(MAX)<11M

在产6-WDFN Exposed Pad模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	7mOhm @ 5A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	17.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1710 pF @ 10 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	900mV @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
最大功耗	3W (Tc)

工作温度	-55°C~150°C(TJ)