G12P04K

Name: G12P04K
Brand: Goford Semiconductor

模拟与电源

P40V,RD(MAX)<35M@-10V,RD(MAX)<45

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	35mOhm @ 6A, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	930 pF @ 20 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	40 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
最大功耗	50W (Tc)

工作温度	-55°C~150°C(TJ)