G100N03D5

Name: G100N03D5
Brand: Goford Semiconductor

模拟与电源

N-CH, 30V, 100A, RD(MAX)<3.5M@10

在产8-PowerTDFN模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	3.5mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	5595 pF @ 50 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
最大功耗	50W (Tc)

工作温度	-55°C~150°C(TJ)