G08N02H

Name: G08N02H
Brand: Goford Semiconductor

模拟与电源

N20V, 12A, RD<11.3M@4.5V,VTH0.5V

在产TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	11.3mOhm @ 1A, 4.5V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	1255 pF @ 10 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±12V
Vgs(th) (Max) @ Id	900mV @ 250µA

漏源电压	20 V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)
最大功耗	1.7W (Tc)

工作温度	-55°C ~ 150°C (TJ)