G05NP10S

Name: G05NP10S
Brand: Goford Semiconductor

模拟与电源

MOSFET 100V 5A/6A 8SOP

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	170mOhm @ 1A, 10V, 200mOhm @ 6A, 10V
FET Feature	Standard
Gate Charge (Qg) (Max) @ Vgs	18nC @ 10V, 25nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	797pF @ 25V, 760pF @ 25V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	100V
Current - Continuous Drain (Id) @ 25°C	5A (Tc), 6A (Tc)
Power - Max	3W (Tc), 2.5W (Tc)

工作温度	-55°C ~ 150°C (TJ)