G050N03S

Name: G050N03S
Brand: Goford Semiconductor

模拟与电源

N30V, 18A,RD<5M@10V,VTH1.1V~2.4V

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	5mOhm @ 10A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1714 pF @ 15 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
系列	G
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.4V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	18A (Tc)
最大功耗	2.1W (Tc)

工作温度	-55°C~150°C(TJ)