45P40

Goford Semiconductor

45P40

Datasheet

模拟与电源

P40V,RD(MAX)<14M@-10V,VTH2V~3V T

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs14mOhm @ 20A, 10V
FET FeatureStandard
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds2960 pF @ 20 V
制造商Goford Semiconductor
安装类型Surface Mount
Product StatusActive
系列TrenchFET®
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C45A (Tc)
最大功耗80W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252

环境

工作温度-55°C ~ 150°C (TJ)