20N06

Name: 20N06
Brand: Goford Semiconductor

模拟与电源

N60V,25A,RD<24M@10V,VTH1.0V~2.5V

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	24mOhm @ 20A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	1609 pF @ 30 V
制造商	Goford Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	2.5V @ 250µA

漏源电压	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
最大功耗	41W (Tc)

工作温度	-55°C ~ 150°C (TJ)