通用
| Capacitance @ Vr, F | 116.75pF @ 0V, 1MHz |
|---|---|
| 制造商 | Global Power Technology-GPT |
| 安装类型 | Surface Mount |
| Product Status | Active |
| Reverse Recovery Time (trr) | 0 ns |
| 技术 | SiC (Silicon Carbide) Schottky |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 650 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 2 A |
| Current - Average Rectified (Io) | 5.8A |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| 速度 | No Recovery Time > 500mA (Io) |
机械
| 封装 | Cut Tape (CT) Tape & Box (TB) |
|---|---|
| Package / Case | DO-214AC, SMA |
| 供应商器件封装 | SMA |
环境
| Operating Temperature - Junction | -55°C ~ 175°C |
|---|