MURT30040

GeneSiC Semiconductor

MURT30040

模拟与电源

DIODE MODULE GP 400V 150A 3TOWER

在产Three Tower模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号MURT300
Diode Configuration1 Pair Common Cathode
制造商GeneSiC Semiconductor
安装类型Chassis Mount
Product StatusActive
Reverse Recovery Time (trr)150 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)400 V
Voltage - Forward (Vf) (Max) @ If1.35 V @ 150 A
Current - Average Rectified (Io) (per Diode)150A
Current - Reverse Leakage @ Vr25 µA @ 50 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseThree Tower
供应商器件封装Three Tower

环境

Operating Temperature - Junction-55°C ~ 150°C