MUR20005CT

GeneSiC Semiconductor

MUR20005CT

模拟与电源

DIODE MODULE GP 50V 100A 2TOWER

停产/老旧Twin Tower模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号MUR20005
Diode Configuration1 Pair Common Cathode
制造商GeneSiC Semiconductor
安装类型Chassis Mount
Product StatusObsolete
Reverse Recovery Time (trr)75 ns
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)50 V
Voltage - Forward (Vf) (Max) @ If1.3 V @ 100 A
Current - Average Rectified (Io) (per Diode)100A
Current - Reverse Leakage @ Vr25 µA @ 50 V
速度Fast Recovery =< 500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseTwin Tower
供应商器件封装Twin Tower

环境

Operating Temperature - Junction-55°C ~ 150°C