MSRT20060D

GeneSiC Semiconductor

MSRT20060D

模拟与电源

DIODE MODULE GP 600V 200A 3TOWER

在产Three Tower模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

基础料号MSRT200
Diode Configuration1 Pair Series Connection
制造商GeneSiC Semiconductor
安装类型Chassis Mount
Product StatusActive
技术Standard

电气

Voltage - DC Reverse (Vr) (Max)600 V
Voltage - Forward (Vf) (Max) @ If1.2 V @ 200 A
Current - Average Rectified (Io) (per Diode)200A
Current - Reverse Leakage @ Vr10 µA @ 600 V
速度Standard Recovery >500ns, > 200mA (Io)

机械

封装Bulk
Package / CaseThree Tower
供应商器件封装Three Tower

环境

Operating Temperature - Junction-55°C ~ 150°C