通用
| 基础料号 | MBRT200150 |
|---|---|
| Diode Configuration | 1 Pair Common Anode |
| 制造商 | GeneSiC Semiconductor |
| 安装类型 | Chassis Mount |
| Product Status | Active |
| 技术 | Schottky |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - DC Reverse (Vr) (Max) | 150 V |
|---|---|
| Voltage - Forward (Vf) (Max) @ If | 880 mV @ 100 A |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Current - Reverse Leakage @ Vr | 1 mA @ 150 V |
| 速度 | Fast Recovery =< 500ns, > 200mA (Io) |
机械
| 封装 | Bulk |
|---|---|
| Package / Case | Three Tower |
| 供应商器件封装 | Three Tower |
环境
| Operating Temperature - Junction | -55°C ~ 150°C |
|---|