GD02MPS12E

GeneSiC Semiconductor

GD02MPS12E

Datasheet

模拟与电源

DIODE SIL CARB 1.2KV 8A TO252-2

在产TO-252-3, DPak (2 Leads + Tab), SC-63模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Capacitance @ Vr, F73pF @ 1V, 1MHz
制造商GeneSiC Semiconductor
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)0 ns
系列SiC Schottky MPS™
技术SiC (Silicon Carbide) Schottky

电气

Voltage - DC Reverse (Vr) (Max)1200 V
Voltage - Forward (Vf) (Max) @ If1.8 V @ 2 A
Current - Average Rectified (Io)8A
Current - Reverse Leakage @ Vr5 µA @ 1200 V
速度No Recovery Time > 500mA (Io)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
供应商器件封装TO-252-2

环境

Operating Temperature - Junction-55°C ~ 175°C