G3R40MT12J

Name: G3R40MT12J
Brand: GeneSiC Semiconductor

模拟与电源

SIC MOSFET N-CH 75A TO263-7

在产TO-263-8, D²Pak (7 Leads + Tab), TO-263CA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	48mOhm @ 35A, 15V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	106 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	2929 pF @ 800 V
制造商	GeneSiC Semiconductor
安装类型	Surface Mount
Product Status	Active
系列	G3R™
技术	SiCFET (Silicon Carbide)
Vgs (Max)	±15V
Vgs(th) (Max) @ Id	2.69V @ 10mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V
Current - Continuous Drain (Id) @ 25°C	75A (Tc)
最大功耗	374W (Tc)

工作温度	-55°C~175°C(TJ)