通用
| Rds On (Max) @ Id, Vgs | 48mOhm @ 35A, 15V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 106 nC @ 15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2929 pF @ 800 V |
| 制造商 | GeneSiC Semiconductor |
| 安装类型 | Through Hole |
| Product Status | Active |
| 系列 | G3R™ |
| 技术 | SiCFET (Silicon Carbide) |
| Vgs (Max) | ±15V |
| Vgs(th) (Max) @ Id | 2.69V @ 10mA |