G3R12MT12K

Name: G3R12MT12K
Brand: GeneSiC Semiconductor

模拟与电源

1200V 12M TO-247-4 G3R SIC MOSFE

在产TO-247-4模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	13mOhm @ 100A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	288 nC @ 15 V
Input Capacitance (Ciss) (Max) @ Vds	9335 pF @ 800 V
制造商	GeneSiC Semiconductor
安装类型	Through Hole
Product Status	Active
技术	SiC (Silicon Carbide Junction Transistor)
Vgs (Max)	+22V, -10V
Vgs(th) (Max) @ Id	2.7V @ 50mA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	15V, 18V
Current - Continuous Drain (Id) @ 25°C	157A (Tc)
最大功耗	567W (Tc)

工作温度	-55°C~175°C(TJ)