通用
| Rds On (Max) @ Id, Vgs | 1.5mOhm @ 475A, 20V |
|---|---|
| 基础料号 | GE12160 |
| 配置 | 2 N-Channel (Half Bridge) |
| FET Feature | Silicon Carbide (SiC) |
| Gate Charge (Qg) (Max) @ Vgs | 3744nC @ 18V |
| Input Capacitance (Ciss) (Max) @ Vds | 90000pF @ 600V |
| 制造商 | GE Aerospace |
| 安装类型 | Chassis Mount |
| Product Status | Active |
| 系列 | SiC Power |
| 技术 | Silicon Carbide (SiC) |
| Vgs(th) (Max) @ Id | 4.5V @ 480mA |