SFU9130TU

Fairchild Semiconductor

SFU9130TU

模拟与电源

P-CHANNEL POWER MOSFET

在产TO-251-3 Short Leads, IPak, TO-251AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs300mOhm @ 4.9A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1035 pF @ 25 V
制造商Fairchild Semiconductor
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C9.8A (Tc)
最大功耗2.5W (Ta), 52W (Tc)

机械

封装Bulk
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
供应商器件封装I-PAK

环境

工作温度-55°C~150°C(TJ)