RF1K49157

Name: RF1K49157
Brand: Fairchild Semiconductor

模拟与电源

N-CHANNEL POWER MOSFET

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	30mOhm @ 6.3A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	88 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds	1575 pF @ 25 V
制造商	Fairchild Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	6.3A (Ta)
最大功耗	2W (Ta)

工作温度	-55°C~150°C(TJ)