IRFS530A

Name: IRFS530A
Brand: Fairchild Semiconductor

模拟与电源

N-CHANNEL POWER MOSFET

在产TO-220-3 Full Pack模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	110mOhm @ 5.35A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 25 V
制造商	Fairchild Semiconductor
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	10.7A (Tc)
最大功耗	32W (Tc)

工作温度	-55°C~175°C(TJ)