IRFI840BTU

Fairchild Semiconductor

IRFI840BTU

模拟与电源

N-CHANNEL POWER MOSFET

在产TO-262-3 Long Leads, I²Pak, TO-262AA模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs800mOhm @ 4A, 10V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs53 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds1800 pF @ 25 V
制造商Fairchild Semiconductor
安装类型Through Hole
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±30V
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压500 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C8A (Tc)
最大功耗3.13W (Ta), 134W (Tc)

机械

封装Bulk
Package / CaseTO-262-3 Long Leads, I²Pak, TO-262AA
供应商器件封装I2PAK (TO-262)

环境

工作温度-55°C~150°C(TJ)