IRF530A

Name: IRF530A
Brand: Fairchild Semiconductor

模拟与电源

POWER FIELD-EFFECT TRANSISTOR, 1

在产TO-220-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	110mOhm @ 7A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	790 pF @ 25 V
制造商	Fairchild Semiconductor
安装类型	Through Hole
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	4V @ 250µA

漏源电压	100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	14A (Tc)
最大功耗	55W (Tc)

工作温度	-55°C~175°C(TJ)