HUF76113T3ST

Name: HUF76113T3ST
Brand: Fairchild Semiconductor

模拟与电源

N-CHANNEL POWER MOSFET

在产TO-261-4, TO-261AA模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	31mOhm @ 4.7A, 10V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	20.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds	625 pF @ 25 V
制造商	Fairchild Semiconductor
安装类型	Surface Mount
Product Status	Active
技术	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA

漏源电压	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	4.7A (Ta)
最大功耗	1.1W (Ta)

工作温度	-55°C~150°C(TJ)