HGT1S12N60C3DS

Fairchild Semiconductor

HGT1S12N60C3DS

模拟与电源

IGBT, 24A, 600V, N-CHANNEL

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge71 nC
输入类型Standard
制造商Fairchild Semiconductor
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)32 ns
Vce(on) (Max) @ Vge, Ic2.2V @ 15V, 15A

电气

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)24 A
Current - Collector Pulsed (Icm)96 A
Power - Max104 W

机械

封装Bulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装TO-263AB

环境

工作温度-40°C~150°C(TJ)