HGT1S12N60A4DS

Fairchild Semiconductor

HGT1S12N60A4DS

模拟与电源

IGBT, 54A, 600V, N-CHANNEL, TO-2

在产TO-263-3, D²Pak (2 Leads + Tab), TO-263AB模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Gate Charge120 nC
输入类型Standard
制造商Fairchild Semiconductor
安装类型Surface Mount
Product StatusActive
Reverse Recovery Time (trr)30 ns
Switching Energy55µJ (on), 50µJ (off)
Td (on/off) @ 25°C17ns/96ns
Test Condition390V, 12A, 10Ohm, 15V
Vce(on) (Max) @ Vge, Ic2.7V @ 15V, 12A

电气

Voltage - Collector Emitter Breakdown (Max)600 V
Current - Collector (Ic) (Max)54 A
Current - Collector Pulsed (Icm)96 A
Power - Max167 W

机械

封装Bulk
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
供应商器件封装TO-263AB

环境

工作温度-55°C~150°C(TJ)