FDMS3616S

Fairchild Semiconductor

FDMS3616S

模拟与电源

MOSFET 2N-CH 25V 16A/18A 8PQFN

停产/老旧8-PowerTDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs6.6mOhm @ 16A, 10V
基础料号FDMS3616
配置2 N-Channel (Dual) Asymmetrical
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1765pF @ 13V
制造商Fairchild Semiconductor
安装类型Surface Mount
Product StatusObsolete
系列PowerTrench®
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压25V
Current - Continuous Drain (Id) @ 25°C16A, 18A
Power - Max1W

机械

封装Bulk
Package / Case8-PowerTDFN
供应商器件封装8-PQFN (5x6)