通用
| Rds On (Max) @ Id, Vgs | 530mOhm @ 500mA, 5V |
|---|---|
| FET Type | N-Channel |
| Input Capacitance (Ciss) (Max) @ Vds | 21 pF @ 32.5 V |
| 制造商 | EPC |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | eGaN® |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |