通用
| Rds On (Max) @ Id, Vgs | 60mOhm @ 4A, 5V |
|---|---|
| 基础料号 | EPC211 |
| 配置 | 2 N-Channel (Dual) Common Source |
| Gate Charge (Qg) (Max) @ Vgs | 0.8nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 80pF @ 60V |
| 制造商 | EPC |
| Product Status | Active |
| 系列 | eGaN® |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 700µA |