通用
| Rds On (Max) @ Id, Vgs | 320mOhm @ 2A, 5V, 3.3Ohm @ 2A, 5V |
|---|---|
| 基础料号 | EPC210 |
| 配置 | 3 N-Channel (Half Bridge + Synchronous Bootstrap) |
| Gate Charge (Qg) (Max) @ Vgs | 0.16nC @ 5V, 0.044nC @ 5V |
| Input Capacitance (Ciss) (Max) @ Vds | 16pF @ 50V, 7pF @ 50V |
| 制造商 | EPC |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | eGaN® |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 100µA, 2.5V @ 20µA |