通用
| Rds On (Max) @ Id, Vgs | 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V |
|---|---|
| 基础料号 | EPC210 |
| 配置 | 2 N-Channel (Half Bridge) |
| Gate Charge (Qg) (Max) @ Vgs | 4.9nC @ 15V, 19nC @ 15V |
| Input Capacitance (Ciss) (Max) @ Vds | 475pF @ 15V, 1960pF @ 15V |
| 制造商 | EPC |
| 安装类型 | Surface Mount |
| Product Status | Active |
| 系列 | eGaN® |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs(th) (Max) @ Id | 2.5V @ 4mA, 2.5V @ 16mA |