通用
| Rds On (Max) @ Id, Vgs | 25mOhm @ 12A, 5V |
|---|---|
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 5.3 nC @ 5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 540 pF @ 100 V |
| 制造商 | EPC |
| 安装类型 | Surface Mount |
| Product Status | Not For New Designs |
| 系列 | eGaN® |
| 技术 | GaNFET (Gallium Nitride) |
| Vgs (Max) | +6V, -4V |
| Vgs(th) (Max) @ Id | 2.5V @ 3mA |