DIW120SIC023-AQ

Name: DIW120SIC023-AQ
Brand: Diotec Semiconductor

模拟与电源

MOSFET TO-247-3L N 130A 1200V

在产TO-247-3模拟与电源

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

Rds On (Max) @ Id, Vgs	23mOhm @ 75A, 18V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds	6150 pF @ 1000 V
制造商	Diotec Semiconductor
安装类型	Through Hole
Product Status	Active
技术	SiCFET (Silicon Carbide)
Vgs(th) (Max) @ Id	2.9V @ 250µA

漏源电压	1200 V
Drive Voltage (Max Rds On, Min Rds On)	18V
Current - Continuous Drain (Id) @ 25°C	125A (Tc)
最大功耗	600W (Tc)

封装	Tube
供应商器件封装	TO-247