DI4A7P06SQ2

Diotec Semiconductor

DI4A7P06SQ2

Datasheet

模拟与电源

MOSFET SO8 P -60V -4.7A 0.075OHM

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs75mOhm @ 5A, 10V
配置2 P-Channel
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs8.5nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds525pF @ 30V
制造商Diotec Semiconductor
安装类型Surface Mount
包装Tape & Reel (TR) Cut Tape (CT)
产品状态在产
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.3V @ 250µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C4.7A (Ta)
Power - Max3W (Ta)

机械

Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101