DI2A8N03PWK2-AQ

Diotec Semiconductor

DI2A8N03PWK2-AQ

Datasheet

模拟与电源

MOSFET, PowerQFN 2x2, 30V, 5A, 1

停产/老旧6-UDFN Exposed Pad模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs72mOhm @ 2A, 4.5V
配置2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs6.8nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds387pF @ 15V
制造商Diotec Semiconductor
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C2.8A (Ta)
Power - Max1W (Ta)

机械

封装Tape & Reel (TR)
Package / Case6-UDFN Exposed Pad
供应商器件封装6-QFN (2x2)

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101