DI0A4N45SQ2

Diotec Semiconductor

DI0A4N45SQ2

Datasheet

模拟与电源

MOSFET SO-8 N 450V 4.5OHM 150C

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs4.5Ohm @ 400mA, 10V
配置2 N-Channel
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs7nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds160pF @ 25V
制造商Diotec Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA

电气

漏源电压450V
Current - Continuous Drain (Id) @ 25°C400mA (Ta)
Power - Max2W (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101