DI040P04PT

Diotec Semiconductor

DI040P04PT

Datasheet

模拟与电源

MOSFET POWERQFN 3X3 P -40V -40A

在产8-PowerWDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs15mOhm @ 10A, 10V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs59 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds3538 pF @ 20 V
制造商Diotec Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id2.5V @ 250µA

电气

漏源电压40 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C40A (Tc)
最大功耗22.7W (Tc)

机械

封装Tape & Reel (TR) Cut Tape (CT)
Package / Case8-PowerWDFN
供应商器件封装8-QFN (3x3)

环境

工作温度-55°C ~ 150°C (TJ)