DI006P02PW

Diotec Semiconductor

DI006P02PW

Datasheet

模拟与电源

MOSFET, POWERQFN 2X2, -20V, -6A

在产8-PowerUDFN模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs25mOhm @ 6A, 4.5V
FET TypeP-Channel
Gate Charge (Qg) (Max) @ Vgs13 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1242 pF @ 10 V
制造商Diotec Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs (Max)±12V
Vgs(th) (Max) @ Id1V @ 250µA

电气

漏源电压20 V
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Current - Continuous Drain (Id) @ 25°C6A (Tc)
最大功耗2W (Tc)

机械

封装Tape & Reel (TR)
Package / Case8-PowerUDFN
供应商器件封装8-QFN (2x2)

环境

工作温度-55°C~150°C(TJ)