DI006H03SQ

Diotec Semiconductor

DI006H03SQ

Datasheet

模拟与电源

MOSFET SO8 N+P 30V 0.025OHM 150C

在产8-SOIC (0.154", 3.90mm Width)模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs25mOhm @ 5A, 10V, 50mOhm @ 5A, 10V
配置2 N and 2 P-Channel (Full Bridge)
FET FeatureStandard
Gate Charge (Qg) (Max) @ Vgs11.7nC @ 10V, 11.4nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds590pF @ 15V, 631pF @ 15V
制造商Diotec Semiconductor
安装类型Surface Mount
Product StatusActive
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 250µA

电气

漏源电压30V
Current - Continuous Drain (Id) @ 25°C6A (Ta), 4.2A (Ta)
Power - Max1.5W (Ta)

机械

封装Tape & Reel (TR)
Package / Case8-SOIC (0.154", 3.90mm Width)
供应商器件封装8-SO

环境

GradeAutomotive
工作温度-55°C ~ 150°C (TJ)
QualificationAEC-Q101