通用
| 基础料号 | ZXTP2012A |
|---|---|
| 制造商 | Diodes Incorporated |
| 安装类型 | Through Hole |
| Product Status | Obsolete |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic | 210mV @ 400mA, 4A |
技术规格
来自已导入产品 Attributes 的结构化电气、机械和环境参数。
电气
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
|---|---|
| Current - Collector (Ic) (Max) | 3.5 A |
| Current - Collector Cutoff (Max) | 20nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 1A, 1V |
| Power - Max | 1 W |
| Frequency - Transition | 120MHz |
机械
| 封装 | Tape & Reel (TR) |
|---|---|
| Package / Case | E-Line-3 |
| 供应商器件封装 | E-Line (TO-92 compatible) |
环境
| 工作温度 | -55°C ~ 150°C (TJ) |
|---|