ZXMHN6A07T8TA

Diodes Incorporated

ZXMHN6A07T8TA

模拟与电源

MOSFET 4N-CH 60V 1.4A SM8

停产/老旧SOT-223-8模拟与电源

技术规格

来自已导入产品 Attributes 的结构化电气、机械和环境参数。

通用

Rds On (Max) @ Id, Vgs300mOhm @ 1.8A, 10V
基础料号ZXMHN6A07T8
配置4 N-Channel (Full Bridge)
FET FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs3.2nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds166pF @ 40V
制造商Diodes Incorporated
安装类型Surface Mount
Product StatusObsolete
技术MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3V @ 250µA

电气

漏源电压60V
Current - Continuous Drain (Id) @ 25°C1.4A
Power - Max1.6W

机械

封装Tape & Reel (TR)
Package / CaseSOT-223-8
供应商器件封装SM8

环境

工作温度-55°C ~ 150°C (TJ)